My final project at the College was performed for the MEMS Department at Intel – FAB8 in Jerusalem. The project focused on characterizing the connections between various parameters in the PECVD process and the electrical and mechanical properties of the SiN layer produced by this method. The central aim of the project was to characterize the properties of this layer so that could be used as a dielectric material with superior electrical properties in existing capacitors within MEMS devices.
I am today employed as a Materials Engineer at Intel Haifa.
From the Final Project (Heb.)
